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BSS84LT1 Power MOSFET 130 mA, 50 V
P-Channel SOT-23
These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are DC-DC converters, load switching, power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones.
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130 mA, 50 V RDS(on) = 10 W
P-Channel 3
* Energy Efficient * Miniature SOT-23 Surface Mount Package Saves Board Space * Pb-Free Package is Available
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (tp 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RqJA TL Value 50 20 130 520 225 - 55 to 150 556 260 mW C C/W C
1
1 Unit Vdc Vdc mA
3
2
SOT-23 CASE 318 STYLE 21
2
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain PD M = Device Code = Date Code
1
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
PDM
2
Gate
Source
ORDERING INFORMATION
Device BSS84LT1 BSS84LT1G Package SOT-23 SOT-23 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2004
1
June, 2004 - Rev. 5
Publication Order Number: BSS84LT1/D
BSS84LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1) Gate-Source Threaded Voltage (VDS = VGS, ID = 250 mA) Static Drain-to-Source On-Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge SOURCE-DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) VGS = 0 V, IS = 130 mA IS ISM VSD - - - - - - 0.130 0.520 2.2 V A VDD = -15 Vdc, ID = -2.5 Adc, RL = 50 W td(on) tr td(off) tf QT - - - - - 2.5 1.0 16 8.0 6000 - - - - - pC ns VDS = 5.0 Vdc VDS = 5.0 Vdc VDG = 5.0 Vdc Ciss Coss Crss - - - 30 10 5.0 - - - pF VGS(th) RDS(on) |yfs| 0.9 - 50 - 5.0 - 2.0 10 - Vdc W mS V(BR)DSS IDSS - - - IGSS - - - - - 0.1 15 60 10 nAdc 50 - - Vdc mAdc Symbol Min Typ Max Unit
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0.6 I D , DRAIN CURRENT (AMPS) 0.5 0.4 0.3 0.2 0.1 0 1 1.5 2 2.5 3 3.5 4 VDS = 10 V - 55C 25C 150C 0.5 0.45 I D , DRAIN CURRENT (AMPS) 0.4 0.3 0.2 0.1 0 0.35 3.0 V 2.75 V 2.5 V 2.25 V 0 1 2 3 4 5 6 7 8 9 10 TJ = 25C VGS = 3.5 V 3.25 V
0.25 0.15 0.05
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On-Region Characteristics
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BSS84LT1
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS 9 8 7 6 5 4 3 2 0 0.1 0.2 0.3 0.4 -55C 25C 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 0 0.1 0.2 0.3 0.4 -55C 0.5 0.6 25C VGS = 10 V
VGS = 4.5 V 150C
150C
0.5
0.6
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current
2 1.8 1.6 1.4 1.2 1 0.8 0.6 -55 -5 45 95 145 VGS = 10 V ID = 0.52 A
Figure 4. On-Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
8 7 6 5 4 3 2 1 0 0
VDS = 40 V TJ = 25C
VGS = 4.5 V ID = 0.13 A
ID = 0.5 A
500
1000
1500
2000
TJ, JUNCTION TEMPERATURE (C)
QT, TOTAL GATE CHARGE (pC)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Gate Charge
1 I D , DIODE CURRENT (AMPS)
0.1
TJ = 150C
25C
-55C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
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3
BSS84LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AH
A L
3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
BS
V
G C D H K J
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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BSS84LT1/D

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